A nondestructive column-selection-enabled 10T SRAM for aggressive power reduction is presented in this brief. It frees a half-selected behavior by exploiting the bitline-shared data-aware write scheme. The differential-VDD (Diff-VDD) technique is adopted to improve the write ability of the design. In addition, its decoupled read bitlines are given permission to be charged and discharged depending on the stored data bits. In combination with the proposed dropped-VDD biasing, it achieves the significant power reduction. The experimental results show that the proposed design provides the 3.3× improvement in the write margin compared with the standard Diff-10T SRAM. A 5.5-kb 10T SRAM in a 65-nm CMOS process has a total power of 51.25 µW and a leakage power of 41.8 µW when operating at 6.25 MHz at 0.5 V, achieving 56.3% reduction in dynamic power and 32.1% reduction in leakage power compared with the previous single-ended 10T SRAM.
Less power consumption
Less voltage and temperature variations
Technology size used 22-nm CMOS Technology with Soft Error Immunity.