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Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application

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DOI: 10.1109/TVLSI.2018.2879341

[/vc_column_text][vc_column_text] Abstract:

In this paper, a novel radiation-hardened 14-transistor SRAM bitcell with speed and power optimized [radiation-hardened with speed and power optimized (RSP)-14T] for space application is proposed. By circuit- and layout-level optimization design in a 65-nm CMOS technology, the 3-D TCAD mixed-mode simulation results show that the novel structure is provided with increased resilience to single-event upset as well as single-event–multiple-node upsets due to the charge sharing among OFF-transistors. Moreover, the HSPICE simulation results show that the write speed and power consumption of the proposed RSP-14T are improved by ~65% and ~50%, respectively, compared with those of the radiation hardened design (RHD)-12T memory cell.

Software Implementation:

• TANNER EDA

Advantages:

• Less Soft Error Rate
• Less Power consumption
• Less immunity and radiation hardness

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