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Source : Tanner EDA
Abstract:
In this brief, a fast and very low power voltage level shifter (LS) is presented. By using a new regulated cross-coupled (RCC) pull-up network, the switching speed is boosted and the dynamic power consumption is highly reduced. The proposed (LS) has the ability to convert input signals with voltage levels much lower than the threshold voltage of a MOS device to higher nominal supply voltage levels. The presented LS occupies a small silicon area owing to its very low number of elements and is ultra-low-power, making it suitable for low-power applications such as implantable medical devices and wireless sensor networks. Results of the post-layout simulation in a standard 0.18-μm CMOS technology show that the proposed circuit can convert up input voltage levels as low as 80 mV. The power dissipation and propagation delay of the proposed level shifter for a low/high supply voltages of 0.4/1.8 V and input frequency of 1 MHz are 123.1 nW and 23.7 ns, respectively.
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An instantaneous power consuming level shifter is presented in this paper to increase the DC converter efficiency. The level shifter is used in a high-side power switch driver to remove the external capacitor which is used in bootstrap technique. The level shifter consumes power only during the transition period. A delay cell is used to turn the level shifter off to reduce the power consumption period. An output voltage detector is added to turn the level shifter off even before the delay time. An asynchronous discontinuous conduction mode buck converter is designed to verify the performance of the level shifter. Simulation results show that the power consumption of the proposed level shifter decreased by 66%, while the converter efficiency increased by the maximum of 9% compared to results obtained for a conventional level shifter. The converter is fabricated using the TSMC 0.18-µm BCD process and it operates within an input range of 2–5 V when the current varies from 400 µA to 18 mA and delivers an output voltage of 1.8 V.
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