Power analysis (PA) attacks have become a serious threat to security systems by enabling secret data extraction through the analysis of the current consumed by the power supply of the system. Embedded memories, often implemented with six-transistor (6T) static random access memory (SRAM) cells, serve as a key component in many of these systems. However, conventional SRAM cells are prone to side-channel power analysis attacks due to the correlation between their current characteristics and written data. To provide resiliency to these types of attacks, we propose a security-oriented 7T SRAM cell, which incorporates an additional transistor to the original 6T SRAM implementation and a two-phase write operation, which significantly reduces the correlation between the stored data and the power consumption during write operations. The proposed 7T SRAM cell was implemented in a 28 nm technology and demonstrates over 1000× lower write energy standard deviation between write ‘1’ and ‘0’ operations compared to a conventional 6T SRAM. In addition, the proposed cell has a 39%–53% write energy reduction and a 19%–38% reduced write delay compared to other power analysis resistant SRAM cells.
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₹10,000.00Original price was: ₹10,000.00.₹6,000.00Current price is: ₹6,000.00.
Source : Tanner EDA
Abstract:
This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross-coupled structure consisting standard inverter with a stacked transistor and Schmitt-trigger inverter with a double-length pull-up transistor. This along with the read path separated from true internal storage nodes eliminates the read-disturbance. Furthermore, it performs its write operation in pseudo differential form through write bit line and control signal with a write-assist technique. To estimate the proposed LP10T SRAM cell’s performance, it is compared with some state-of-the-art SRAM cells using HSPICE in 16-nm CMOS predictive technology model at 0.7 V supply voltage under harsh manufacturing process, voltage, and temperature variations. The proposed SRAM cell offers 4.65X/1.57X/1.46X improvement in RSNM/WSNM/WM and 4.40X/1.69X narrower spread in RSNM/WM compared to the conventional 6T SRAM cell. Furthermore, it shows 1.26X/1.08X/1.01X higher RSNM/WSNM/WM and 1.71X/1.25X tighter/wider spread in RSNM/WM compared to the best studied SRAM cells. The proposed SRAM cell indicates 74.48%/1.41% higher/lower read/write delay compared to the 6T SRAM cell. Moreover, it exhibits the third-(second-) best read (write) dynamic power, consuming 29.69% (26.87%) lower than the 6T SRAM cell. The leakage power is minimized by the proposed design, which is 37.35% and 12.08% lower than that of the 6T and best studied cells, respectively. Nonetheless, the proposed LP10T SRAM cell occupies 1.313X higher area compared to the 6T SRAM cell.
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A non-destructive column-selection-enabled 10T SRAM for aggressive power reduction is presented in this brief. It frees a half-selected behavior by exploiting the bit line-shared data-aware write scheme. The differential-VDD (Diff-VDD) technique is adopted to improve the write ability of the design. In addition, its decoupled read bit lines are given permission to be charged and discharged depending on the stored data bits. In combination with the proposed dropped-VDD biasing, it achieves the significant power reduction. The experimental results show that the proposed design provides the 3.3× improvement in the write margin compared with the standard Diff-10T SRAM. A 5.5-kb 10T SRAM in a 65-nm CMOS process has a total power of 51.25 µW and a leakage power of 41.8 µW when operating at 6.25 MHz at 0.5 V, achieving 56.3% reduction in dynamic power and 32.1% reduction in leakage power compared with the previous single-ended 10T SRAM.
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₹18,000.00Original price was: ₹18,000.00.₹12,000.00Current price is: ₹12,000.00.
Source : Verilog HDL
Abstract:
Static random access memory (SRAM)-based ternary content-addressable memory (TCAM) on field-programmable gate arrays (FPGAs) is used for packet classification in software-defined networking (SDN) and Open Flow applications. SRAMs implementing TCAM contents constitute the major part of a TCAM design on FPGAs, which are vulnerable to soft errors. The protection of SRAM-based TCAMs against soft errors is challenging without compromising critical path delay and maintaining a high search performance. This brief presents a low cost and low-response-time technique for the protection of SRAM-based TCAMs. This technique uses simple, single-bit parity for fault detection which has a minimal critical path overhead. This technique exploits the binary-encoded TCAM table maintained in SRAM-based TCAMs for update purposes to implement a low-response-time error-correction mechanism at low cost. The error-correction process is carried out in the background, allowing lookup operations to be performed simultaneously, thus maintaining a high search performance. The proposed technique provides protection against soft errors with a response time of 293 ns, whereas maintaining a search rate of 222 million searches per second on a 1024 × 40 size TCAM on Artix-7 FPGA.
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₹12,000.00Original price was: ₹12,000.00.₹6,000.00Current price is: ₹6,000.00.
Source : Tanner EDA
Abstract:
This paper presents a one-sided Schmitt-trigger based 9T static random access memory cell with low energy consumption and high read stability, write ability, and hold stability yields in a bit-interleaving structure without write-back scheme. The proposed Schmitt-trigger-based 9T static random access memory cell obtains a high read stability yield by using a one-sided Schmitt-trigger inverter with a single bit-line structure. In addition, the write ability yield is improved by applying selective power gating and a Schmitt-trigger inverter write assist technique that controls the trip voltage of the Schmitt-trigger inverter. The proposed Schmitt-trigger-based 9T static random access memory cell has 0.79, 0.77, and 0.79 times the area, and consumes 0.31, 0.68, and 0.90 times the energy of Chang’s 10T, the Schmitt-trigger-based 10T, and MH’s 9T static random access memory cells, respectively, based on 22-nm Fin FET technology.
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₹12,000.00Original price was: ₹12,000.00.₹10,000.00Current price is: ₹10,000.00.
Source : Tanner EDA
Abstract:
Data movement between memory and processing units poses an energy barrier to Von-Neumann-based architectures. In-memory computing (IMC) eliminates this barrier. RRAM-based IMC has been explored for data-intensive applications, such as artificial neural networks and matrix-vector multiplications that are considered as “soft” tasks where performance is a more important factor than accuracy. In “hard” tasks such as partial differential equations (PDEs), accuracy is a determining factor. In this brief, we propose ReLOPE, a fully RRAM crossbar-based IMC to solve PDEs using the Runge–Kutta numerical method with 97% accuracy. ReLOPE expands the operating range of solution by exploiting shifters to shift input data and output data. ReLOPE range of operation and accuracy can be expanded by using fine-grained step sizes by programming other RRAMs on the BL. Compared to software-based PDE solvers, ReLOPE gains 31.4× energy reduction at only 3% accuracy loss.
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₹10,000.00Original price was: ₹10,000.00.₹6,000.00Current price is: ₹6,000.00.
Source : Tanner EDA
Abstract:
With the advancement of technology, the size of transistors and the distance between them are reducing rapidly. Therefore, the critical charge of sensitive nodes is reducing, making SRAM cells, used for aerospace applications, more vulnerable to soft-error. If a radiation particle strikes a sensitive node of the standard 6T SRAM cell, the stored data in the cell are flipped, causing a single-event upset (SEU). Therefore, in this paper, a Soft-Error-Aware Read-Stability-Enhanced Low Power 12T (SARP12T) SRAM cell is proposed to mitigate SEUs. To analyze the relative performance of SARP12T, it is compared with other recently published soft-error-aware SRAM cells, QUCCE12T, QUATRO12T, RHD12T, RHPD12T and RSP14T. All the sensitive nodes of SARP12T can regain their data even if the node values are flipped due to a radiation strike. Furthermore, SARP12T can recover from the effect of single event multi-node upsets (SEMNUs) induced at its storage node pair. Along with these advantages, the proposed cell exhibits the highest read stability, as the ‘0’-storing storage node, which is directly accessed by the bit line during read operation, can recover from any upset. Furthermore, SARP12T consumes the least hold power. SARP12T also exhibits higher write ability and shorter write delay than most of the comparison cells. All these improvements in the proposed cell are obtained by exhibiting only a slightly longer read delay and consuming slightly higher read and write energy.
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