Proposed Title :
A 22nm CMOS Implementation of One Bandgap Booster For Reference Voltage and Current
Improvement of this Project:
- To design a Once Bandgap Voltage and current Reference without amplifier at 180 nm and 22 nm CMOS Technology and compare all the parameters in terms of area, delay and power.
- Tanner EDA
This article presents a Bandgap voltage and current reference (BGVCR) in a single and short circuit for battery powered applications, it’s used for low power and high precision bandgap voltage. In the proposed circuit all amplifier were removed. The voltage reference is calculated from the topology of the bandgap, and the current reference comes from the summation of the proportional to absolute temperature (PTAT) and the complementary to absolute temperature (CTAT). The current reference should then be optimized by the temperature coefficient. In order to increases existing mirror accuracy and line sensitivity, a pseudo-cascode structure and a basic line sensitivity improvement system are also implemented. The proposed circuit is designed in TANNER EDA tool, it an active area of 0.462 mm with a 22 nm CMOS technology. The VREF and IREF measured are 1.8 V and 43 mA respectively.
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A Sub-200nW All-in-One Bandgap Voltage and Current Reference without Amplifiers
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