Proposed Title :

A 22 nm CMOS Implementation of Low power and Low Area Bandgap Reference Circuit

Improvement of this Project:

• Topology has to be implemented in 22nm technology node. Base paper shared has the circuit implementation at 28nm.

• The PSSR & TC should be better at 22nm compared to base paper.

• Circuit consists of Opamp, Design of opamp at 22nm should be done and 22nm opamp design has to be taken from recent ieee paper (2019,20,21).

• Topology has 5 parts like output stage, startup circuit, design of all the stages has to be given.

• The design values and its calculations should be given.

Software implementation:

• Tanner EDA

Proposed System:

This article presents a Bandgap voltage and current reference in a single and short reference circuit for battery powered applications, it’s used for low power and high precision bandgap voltage. In the proposed circuit all amplifier were removed. The method of Hybrid temperature adjustment compensation circuit, to decrease the bandgap reference temperature drift. A temperature insensitive referring voltage can be achieved in the proposed circuit by combining first-order bandgap, nonlinear compensation current and a curvature compensation current in combination. The proposed circuit is designed in TANNER EDA tool, it an active area of 0.962 mm with a 22 nm CMOS technology. The input voltage measured are 0.8 V in the range of -20^oC to 120^oC temperature range respectively.

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Low-Voltage Bandgap Reference Circuit in 28nm CMOS